Samsung

Samsung 980 1 TB M.2 PCI Express 3.0 NVMe V-NAND

SKU
MZ-V8V1T0BW
In Stock
MZ-V8V1T0BW
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  • Samsung NVMe SSD powered by V-NAND technology
  • Up to 3,500 MB/s sequential read and 3,000 MB/s write
Hard drive
PCI Express interface data lanesx4
SSD capacity1 TB
Memory typeV-NAND
Data transmission
Read speed3500 MB/s
Write speed3000 MB/s
Random write (4KB)480000 IOPS
Random read (4KB)500000 IOPS
Security
Security algorithms256-bit AES
Endurance
Mean time between failures (MTBF)1500000 h
Features
InterfacePCI Express 3.0
Component forPC/Laptop
NVMeYes
NVMe version1.4
PCI Express interface data lanesx4
SSD capacity1 TB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed3500 MB/s
Write speed3000 MB/s
Memory typeV-NAND
Random write (4KB)480000 IOPS
Random read (4KB)500000 IOPS
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
SSD form factorM.2
Harmonized System (HS) code84717070
Power
Power consumption (average)4.6 W
Power consumption (max)5.3 W
Operating voltage3.3 V
Performance
InterfacePCI Express 3.0
Component forPC/Laptop
NVMeYes
NVMe version1.4
PCI Express interface data lanesx4
SSD capacity1 TB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed3500 MB/s
Write speed3000 MB/s
Memory typeV-NAND
Random write (4KB)480000 IOPS
Random read (4KB)500000 IOPS
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
Design
Component forPC/Laptop
SSD form factorM.2
Weight & dimensions
Width80.2 mm
Weight8 g
Height2.38 mm
Depth22.1 mm
Operational conditions
Operating temperature (T-T)0 - 70 °C
Operating vibration1500 G
Technical details
InterfacePCI Express 3.0
S.M.A.R.T. supportYes
Operating temperature (T-T)0 - 70 °C
Operating vibration1500 G
Hardware encryptionYes
SSD form factorM.2
Logistics data
Harmonized System (HS) code84717070