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Team Group
Team Group ELITE TED516G5200C4201 memory module 16 GB 1 x 16 GB DDR5 5200 MHz
SKU
TED516G5200C4201
In Stock
16 GB, DDR5, 5200 MHz, 288-pin, Unbuffered, 1.1 V
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Increased Fundamental Frequency, Faster Speeds
Minimum specifications reach an ultra-high frequency of 4800MHz, 50% more from the 3200MHz standard frequency maximum of DDR4 modules. Let our DDR5 help you breeze through all your boring, mundane tasks.
Unleashed Capacity, Stronger Multitasking
DDR5 kit is available from a 8GB capacity per module and, in compliance with JEDEC standards, can be expanded to 128GB capacity to uncap your memory and deliver a smooth multitasking experience.
Improved Structural Composition, Greater Efficiency
Factors critical to improved performance include increased banks and burst lengths. DDR5 allows up to 32 banks (storage units that can be enabled/disabled separately) comprised from 8 bank groups, doubling the access availability from the 16 banks available in DDR4 standards; the DDR5 burst length (amount of data that can be accessed from a single DRAM read/write command) is also twice as much as DDR4 burst lengths.
Reduced Working Voltage, Better Energy Efficiency
Standard working voltage has been reduced from the 1.2V in DDR4 modules to 1.1V, reducing energy consumption for each bandwidth to conserve energy and reduce your burden. To minimize noise interference, the power management has been transferred from motherboard to RAM and will be complimented with a PMIC for effective system load management.
On-die ECC, Stable Performance
DDR5 memory modules support on-die ECCs, a feature that self-corrects DRAM cells, to deliver stability to DRAM systems using DDR5.
Minimum specifications reach an ultra-high frequency of 4800MHz, 50% more from the 3200MHz standard frequency maximum of DDR4 modules. Let our DDR5 help you breeze through all your boring, mundane tasks.
Unleashed Capacity, Stronger Multitasking
DDR5 kit is available from a 8GB capacity per module and, in compliance with JEDEC standards, can be expanded to 128GB capacity to uncap your memory and deliver a smooth multitasking experience.
Improved Structural Composition, Greater Efficiency
Factors critical to improved performance include increased banks and burst lengths. DDR5 allows up to 32 banks (storage units that can be enabled/disabled separately) comprised from 8 bank groups, doubling the access availability from the 16 banks available in DDR4 standards; the DDR5 burst length (amount of data that can be accessed from a single DRAM read/write command) is also twice as much as DDR4 burst lengths.
Reduced Working Voltage, Better Energy Efficiency
Standard working voltage has been reduced from the 1.2V in DDR4 modules to 1.1V, reducing energy consumption for each bandwidth to conserve energy and reduce your burden. To minimize noise interference, the power management has been transferred from motherboard to RAM and will be complimented with a PMIC for effective system load management.
On-die ECC, Stable Performance
DDR5 memory modules support on-die ECCs, a feature that self-corrects DRAM cells, to deliver stability to DRAM systems using DDR5.
Memory | |
---|---|
Package type | Blister |
Buffered memory type | Unregistered (unbuffered) |
Memory layout (modules x size) | 1 x 16 GB |
Internal memory | 16 GB |
Component for | PC |
Memory form factor | 288-pin DIMM |
CAS latency | 42 |
Memory voltage | 1.1 V |
ECC | No |
Memory clock speed | 5200 MHz |
Internal memory type | DDR5 |
Power | |
Memory voltage | 1.1 V |
Design | |
JEDEC standard | Yes |
Features | |
---|---|
On-Die ECC | Yes |
Buffered memory type | Unregistered (unbuffered) |
Memory layout (modules x size) | 1 x 16 GB |
Internal memory | 16 GB |
Component for | PC |
Memory form factor | 288-pin DIMM |
CAS latency | 42 |
Memory voltage | 1.1 V |
ECC | No |
Memory clock speed | 5200 MHz |
Internal memory type | DDR5 |
JEDEC standard | Yes |
Weight & dimensions | |
Depth | 134 mm |
Height | 32 mm |
Package type | Blister |
Packaging data | |
Package type | Blister |