Samsung

Samsung MZ-V8P2T0BW internal solid state drive 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC

SKU
MZ-V8P2T0BW
In Stock
MZ-V8P2T0BW
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  • Next-level SSD performance
  • Exceptional speed
  • A powerful combination
Hard drive
PCI Express interface data lanesx4
SSD capacity2 TB
Memory typeV-NAND MLC
Data transmission
Read speed7000 MB/s
Write speed5100 MB/s
Random write (4KB)1000000 IOPS
Random read (4KB)1000000 IOPS
Security
Security algorithms256-bit AES
Endurance
Mean time between failures (MTBF)1500000 h
Features
InterfacePCI Express 4.0
Component forPC/Laptop
NVMeYes
NVMe version1.3c
PCI Express interface data lanesx4
SSD capacity2 TB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed7000 MB/s
TRIM supportYes
Write speed5100 MB/s
Memory typeV-NAND MLC
Random write (4KB)1000000 IOPS
Random read (4KB)1000000 IOPS
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
SSD form factorM.2
Harmonized System (HS) code84717070
Power
Power consumption (average)6.1 W
Power consumption (max)7.2 W
Power consumption (standby)0.035 W
Operating voltage3.3 V
Performance
InterfacePCI Express 4.0
Component forPC/Laptop
NVMeYes
NVMe version1.3c
PCI Express interface data lanesx4
SSD capacity2 TB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed7000 MB/s
TRIM supportYes
Write speed5100 MB/s
Memory typeV-NAND MLC
Random write (4KB)1000000 IOPS
Random read (4KB)1000000 IOPS
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
Design
Component forPC/Laptop
SSD form factorM.2
Weight & dimensions
Width80.2 mm
Weight9 g
Height22.1 mm
Depth2.38 mm
Package typeBox
Packaging data
Package typeBox
Operational conditions
Operating temperature (T-T)0 - 70 °C
Operating shock1500 G
Minimum operating temperature0 °C
Maximum operating temperature70 °C
Technical details
InterfacePCI Express 4.0
S.M.A.R.T. supportYes
Operating temperature (T-T)0 - 70 °C
TRIM supportYes
Operating shock1500 G
Hardware encryptionYes
SSD form factorM.2
Logistics data
Harmonized System (HS) code84717070