Samsung

Samsung M386AAG40DM3-CWE memory module 128 GB 1 x 128 GB DDR4 3200 MHz ECC

SKU
M386AAG40DM3-CWE
In Stock
128GB, DDR4, 3200 Mbps, Server, 1.2 V, 288-Pin, 4R x 4
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Load reduced DIMM
Includes a register for enhancing clock, command and control signals
Enhanced data signal by placing data buffer
Best solution for achieving high density with high speed
Supports x4 Organization / up to 4 ranks per DIMM and 3DPC
Application : Server
Power
Memory voltage1.2 V
Design
BacklightNo
Technical details
Chips organisation4Rx4
Memory
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 128 GB
Internal memory128 GB
Component forServer
Memory form factor288-pin DIMM
Memory voltage1.2 V
Memory ranking4
ECCYes
Memory clock speed3200 MHz
Internal memory typeDDR4
Features
Buffered memory typeRegistered (buffered)
BacklightNo
Memory layout (modules x size)1 x 128 GB
Internal memory128 GB
Component forServer
Memory form factor288-pin DIMM
Memory voltage1.2 V
Memory ranking4
ECCYes
Memory clock speed3200 MHz
Internal memory typeDDR4
Other features
Chips organisation4Rx4