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Kingston Technology
Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR3L
SKU
KVR16LS11/4
In Stock
4GB DDR3L 1600MHz Non-ECC, CL11, 1.35V, Unbuffered, SODIMM Module
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Next Day (UK) Delivery offered on stock items
- JEDEC standard 1.35V and 1.5V Power Supply
- VDDQ = 1.35V and 1.5V
- 800MHz fCK for 1600Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C
- Asynchronous Reset
- PCB: Height1.18” (30mm), double sided component
- Lead Free RoHS Compliant
| Power | |
|---|---|
| Memory voltage | 1.35,1.5 V |
| Technical details | |
| Memory layout | 1 x 4096 MB |
| Internal memory | 4096 MB |
| Chips organisation | X8 |
| Error indication | No |
| Country of origin | Taiwan |
| Bus clock rate | 1600 MHz |
| Memory | |
| Buffered memory type | Unregistered (unbuffered) |
| Memory layout (modules x size) | 1 x 4 GB |
| Internal memory | 4 GB |
| Component for | Laptop |
| Memory form factor | 204-pin SO-DIMM |
| CAS latency | 11 |
| Memory voltage | 1.35,1.5 V |
| Memory bus | 64 bit |
| Lead plating | Gold |
| Module configuration | 512M X 64 |
| Row cycle time | 48.125 ns |
| Refresh row cycle time | 260 ns |
| Row active time | 35 ns |
| ECC | No |
| Internal memory type | DDR3L |
| Features | |
| Buffered memory type | Unregistered (unbuffered) |
| Memory layout (modules x size) | 1 x 4 GB |
| Internal memory | 4 GB |
| Component for | Laptop |
| Memory form factor | 204-pin SO-DIMM |
| CAS latency | 11 |
| Memory voltage | 1.35,1.5 V |
| Memory bus | 64 bit |
| Lead plating | Gold |
| Module configuration | 512M X 64 |
| Row cycle time | 48.125 ns |
| Refresh row cycle time | 260 ns |
| Row active time | 35 ns |
| Country of origin | Taiwan |
| ECC | No |
| Internal memory type | DDR3L |
| Harmonized System (HS) code | 84733020 |
| Operational conditions | |
|---|---|
| Operating temperature (T-T) | 0 - 85 °C |
| Storage temperature (T-T) | -55 - 100 °C |
| Weight & dimensions | |
| Width | 67.6 mm |
| Height | 30 mm |
| Logistics data | |
| Harmonized System (HS) code | 84733020 |
| Other features | |
| Memory layout | 1 x 4096 MB |
| Internal memory | 4096 MB |
| Chips organisation | X8 |
| Error indication | No |
| Country of origin | Taiwan |
| Bus clock rate | 1600 MHz |
| Harmonized System (HS) code | 84733020 |